Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet's Fringe Field
- M. Lavanant
- P. Vallobra
- et al.
- 2019
- Physical Review Applied
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158 results for Jonathan Z. Sun
Reliable 5 ns writing of spin-transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2019
- IEEE Magnetics Letters
Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
- Jonathan Z. Sun
- Philip Trouilloud
- et al.
- 2019
- AIP Advances
Low-Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons
- Orchi Hassan
- Rafatul Faria
- et al.
- 2019
- IEEE Magnetics Letters
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
Resistance-area product and size dependence of spin-torque switching efficiency in CoFeB-MgO based magnetic tunnel junctions
- Jonathan Z. Sun
- 2017
- Physical Review B
Low-current spin transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-TSA 2017
Low-current Spin Transfer Torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-DAT 2017
Material parameters of perpendicularly magnetized tunnel junctions from spin torque ferromagnetic resonance techniques
- Christopher Safranski
- Yu-Jin Chen
- et al.
- 2016
- Applied Physics Letters
Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory
- Jonathan Z. Sun
- 2016
- SPIE Nanoscience + Engineering 2016