Aggressive SiGe channel gate stack scaling by remote Oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Solid State Letters
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91 results for John Bruley
Aggressive sige channel gate stack scaling by remote oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Meeting 2012
Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography
- S.O. Hruszkewycz
- M.V. Holt
- et al.
- 2012
- Nano Letters
Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography
- Guanxiong Liu
- Yanqing Wu
- et al.
- 2012
- ACS Nano
Full metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011
Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling
- Martin M. Frank
- Chiara Marchiori
- et al.
- 2011
- Microelectronic Engineering
Intrinsic effects of the crystal orientation difference between (100) and (110) silicon substrates on characteristics of high-k/metal gate metal-oxide-semiconductor field-effect transistors
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- Japanese Journal of Applied Physics
High temperature (1000°C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness
- Catherine Dubourdieu
- E. Cartier
- et al.
- 2011
- Applied Physics Letters
Characteristics of La2O3-and Al2O 3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- Japanese Journal of Applied Physics
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- Ryosuke Iijima
- Lisa F. Edge
- et al.
- 2011
- IEEE T-ED