High-K gate dielectric structures by atomic layer deposition for the 32nm and beyond nodes
- R.D. Clark
- S. Consiglio
- et al.
- 2008
- ECS Meeting 2008
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90 results for John Bruley
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
Novel lithography-independent pore phase change memory
- M. Breitwisch
- T. Nirschl
- et al.
- 2007
- VLSI Technology 2007
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
Cleans for Al vias in a 0.175 μm Dual Damascene Process
- J.P. Gambino
- L. Clevenger
- et al.
- 1999
- IITC 1999
Ion beam deposited diamond-like films: Synthesis, properties and applications
- J.J. Cuomo
- J. Doyle
- et al.
- 1990
- Carbon
Investigating microwave loss of SiGe using superconducting transmon qubits
- Martin Sandberg
- Vivekananda P. Adiga
- et al.
- 2021
- Applied Physics Letters
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Mattias Borg
- Lynne Gignac
- et al.
- 2018
- Nanotechnology
Effect of hot carrier stress on device junctions measured by electron holography and scanning capacitance microscopy
- Yun-Yu Wang
- J. Nxumalo
- et al.
- 2018
- Applied Physics Letters
Template-assisted selective epitaxy of III-V nanoscale devices for co-planar heterogeneous integration with Si
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- Applied Physics Letters