32 and 45 nm radiation-hardened-by-design (RHBD) SOI latches
- Kenneth P. Rodbell
- David F. Heidel
- et al.
- 2011
- IEEE TNS
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22 results for Paul W. Marshall
Comparison of single and two-photon absorption for laser characterization of single-event upsets in SOI SRAMs
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2011
- IEEE TNS
Impact of spacecraft shielding on direct ionization soft error rates for sub-130 nm technologies
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2010
- IEEE TNS
Heavy ion testing with iron at 1 GeV/amu
- Jonathan A. Pellish
- Michael A. Xapsos
- et al.
- 2010
- IEEE TNS
Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2010
- IEEE TNS
Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
- Jonathan A. Pellish
- Robert A. Reed
- et al.
- 2009
- IEEE TNS
Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM
- David F. Heidel
- Paul W. Marshall
- et al.
- 2009
- IEEE TNS
Low energy proton single-event-upset test results on 65 nm SOI SRAM
- David F. Heidel
- Paul W. Marshall
- et al.
- 2008
- IEEE TNS
The radiation tolerance of strained Si/SiGe n-MODFETs
- Anuj Madan
- Bongim Jun
- et al.
- 2007
- IEEE TNS
X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI
- Marco Bellini
- Bongim Jun
- et al.
- 2006
- IEEE TNS