High-Performance Bipolar Technology for Improved ECL Power Delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEEE Electron Device Letters
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76 results for John D. Cressler
Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)
- Joachim N. Burghartz
- Andrew C. Megdanis
- et al.
- 1991
- IEEE Electron Device Letters
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
A Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters
Sub-400-ps ISL circuits
- Ching-Te Chuang
- G.P. Li
- et al.
- 1986
- IEEE Electron Device Letters
Impact of source/drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs
- Rajan Arora
- Sachin Seth
- et al.
- 2011
- IRPS 2011
Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates
- Anuj Madan
- Jiong Jiong Mo
- et al.
- 2009
- RADECS 2009
Assessing the high-temperature capabilities of SiGe HBTs fabricated on CMOS-compatible thin-film SOI
- Marco Bellini
- John D. Cressler
- et al.
- 2007
- BCTM 2007
On the frequency limits of SiGe HBTs for TeraHertz applications
- Yuan Jiahui
- Ram Krithivasan
- et al.
- 2007
- BCTM 2007