A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
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38 results for M.W. Lane
Annealing-induced interfacial toughening using a molecular nanolayer
- Darshan D. Gandhi
- Michael Lane
- et al.
- 2007
- Nature
Optimized interfacial strength for dense and porous SiCOH
- D.D. Restaino
- Steve Molis
- et al.
- 2007
- ADMETA 2007
Chip package interaction in ultra low-k/copper interconnect technology
- X.-H. Liu
- T.M. Shaw
- et al.
- 2007
- ICEPT 2007
Experimental determination of the toughness of crack stop structures
- T.M. Shaw
- E. Liniger
- et al.
- 2007
- IITC 2007
Chip-package-interaction modeling of ultra low-k/copper back end of line
- X.-H. Liu
- T.M. Shaw
- et al.
- 2007
- IITC 2007
Physical, electrical, and reliability characterization of Ru for Cu interconnects
- C.-C. Yang
- T. Spooner
- et al.
- 2006
- IITC 2006
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Theory for electromigration failure in Cu conductors
- J.R. Lloyd
- C.E. Murray
- et al.
- 2005
- International Workshop on Stress-Induced Phenomena in Metallization 2005