The crystallization behavior of stoichiometric and off-stoichiometric Ga-Sb-Te materials for phase-change memory
- Huai-Yu Cheng
- Simone Raoux
- et al.
- 2011
- Applied Physics Letters
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153 results for Jean L. Jordan-Sweet
Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters
Triaxial stress distributions in Cu/low-k interconnect features
- Conal E. Murray
- Paul R. Besser
- et al.
- 2011
- Applied Physics Letters
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics
Stress gradients observed in Cu thin films induced by capping layers
- Conal E. Murray
- Paul R. Besser
- et al.
- 2011
- Journal of Materials Research
A quantitative analysis of room temperature recrystallization kinetics in electroplated copper films using high resolution x-ray diffraction
- Andrew Ying
- Christian Witt
- et al.
- 2011
- Journal of Applied Physics
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-x Ptx silicide films
- Zhen Zhang
- Bin Yang
- et al.
- 2010
- Applied Physics Letters
Texture of CoSi2 films on Si(111), (110) and (001) substrates
- K. De Keyser
- C. Detavernier
- et al.
- 2010
- Thin Solid Films
Phase formation and stability of Ni silicide contacts - Scaling to ultra-thin films
- C. Detavernier
- K. De Keyser
- et al.
- 2010
- ICSICT 2010
Heteroepitaxial silicon film growth at 600 °c from an Al-Si eutectic melt
- P. Chaudhari
- Heejae Shim
- et al.
- 2010
- Thin Solid Films