Full metal gate with borderless contact for 14 nm and beyond
Soon-Cheon Seo, L.F. Edge, et al.
VLSI Technology 2011
Lax Lu1-xO3 thin films were deposited on 300 mm silicon wafers by physical vapor deposition and fabricated into field-effect transistors using a gate-first process flow. The films were characterized using transmission electron microscopy, Rutherford backscattering spectrometry, and synchrotron x-ray diffraction. The results show the films remain amorphous even at temperatures of 1000°C. The dielectric properties of Lax Lu1-x O3 (0.125x0.875) thin films were evaluated as a function of film composition. The amorphous Lax Lu1-x O3 thin films have a dielectric constant (K) of 23 across the composition range. The inversion thickness (Tinv) of the La x Lu1-x O3 thin films was scaled to <1.0 nm. © 2011 American Institute of Physics.
Soon-Cheon Seo, L.F. Edge, et al.
VLSI Technology 2011
Shogo Mochizuki, Rainer Loesing, et al.
Thin Solid Films
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ECS Meeting 2013
T. Standaert, Genevieve Beique, et al.
IITC/AMC 2016