CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layerGuy M. CohenLeathen Shiet al.2014ASMC 2014
CDSEM AFM hybrid metrology for the characterization of gate-all-around silicon nano wiresShimon LeviIshai Schwarzbandet al.2014SPIE Advanced Lithography 2014
Buckling characterization of gate all around silicon nanowiresShimon LeviIshai Schwarzbandet al.2013SPIE Advanced Lithography 2013