Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
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53 results for Ken Rim
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
- K. Rim
- S. Narasimha
- et al.
- 2002
- IEDM 2002
Strained Si surface channel MOSFETS for high-performance CMOS technology
- K. Rim
- 2001
- ISSCC 2001
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
Reverse temperature dependence of circuit performance in high- k/metal-gate technology
- Shu-Jen Han
- Dechao Guo
- et al.
- 2009
- IEEE Electron Device Letters
Silicon device scaling to the sub-10-nm regime
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- Science
A high-speed, high-sensitivity silicon lateral trench photodetector
- Min Yang
- Kern Rim
- et al.
- 2002
- IEEE Electron Device Letters
Measurement of the effect of self-heating in strained-silicon MOSFETs
- Keith A. Jenkins
- K. Rim
- 2002
- IEEE Electron Device Letters
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
Silicon germanium FinFET device physics, process integration and modeling considerations (invited)
- Darsen Lu
- Pierre Morin
- et al.
- 2014
- ECSSMEQ 2014