High-performance silicon-germanium technology
- Seshadri Subbanna
- Greg Freeman
- et al.
- 2005
- DRC 2005
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53 results for Ken Rim
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
Characteristics of high performance PFETs with embedded SiGe source/drain and 〈100〉 channels on 45° rotated wafers
- Qiqing Ouyang
- Meikei Ieong
- et al.
- 2005
- VLSI Technology 2005
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
Strain for CMOS performance improvement
- Victor Chan
- Ken Rim
- et al.
- 2005
- CICC 2005
Silicon device scaling to the sub-10-nm regime
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- Science
Scaling beyond conventional CMOS device
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- ICSICT 2004
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Channel design and mobility enhancement in strained germanium buried channel MOSFETs
- H. Shang
- J.O. Chu
- et al.
- 2004
- VLSI Technology 2004
Compact modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- International Journal of Electronics