Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- K. Cheng
- S.-C. Seo
- et al.
- 2014
- VLSI Technology 2014
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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53 results for Ken Rim
Dielectric isolated FinFETs on bulk substrate
- Darsen Lu
- Kangguo Cheng
- et al.
- 2014
- S3S 2014
A comparative study of fin-last and fin-first SOI FinFETs
- Darsen Lu
- Josephine Chang
- et al.
- 2013
- SISPAD 2013
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- A. Khakifirooz
- R. Sreenivasan
- et al.
- 2013
- S3S 2013
Channel doping impact on FinFETs for 22nm and beyond
- Chung-Hsun Lin
- R. Kambhampati
- et al.
- 2012
- VLSI Technology 2012
SOI CMOS technology with 360GHz fT NFET, 260GHz fT PFET, and record circuit performance for millimeter-wave digital and analog system-on-chip applications
- Sungjae Lee
- Jonghae Kim
- et al.
- 2007
- VLSI Technology 2007
Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
- Yaocheng Liu
- Oleg Gluschenkov
- et al.
- 2007
- VLSI Technology 2007
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
Simulation analysis of series resistance for SOI MOSFET in nanometer regime
- Xinlin Wang
- Phil Oldiges
- et al.
- 2005
- SISPAD 2005
High-performance silicon-germanium technology
- Seshadri Subbanna
- Greg Freeman
- et al.
- 2005
- DRC 2005