Ultrathin high-K gate stacks for advanced CMOS devicesE. GusevD.A. Buchananet al.2001Technical Digest - International Electron Devices Meeting
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applicationsD.A. BuchananE. Gusevet al.2000IEDM 2000
Fabrication and analysis of deep submicron strained-Si N-MOSFET'sKern RimJudy L. Hoytet al.2000IEEE Transactions on Electron Devices