Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials
- Jing Li
- Binquan Luan
- et al.
- 2011
- IEDM 2011
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52 results for Huai-Yu Cheng
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
- H.L. Lung
- Matthew Breitwisch
- et al.
- 2011
- VLSI Technology 2011
The crystallization behavior of stoichiometric and off-stoichiometric Ga-Sb-Te materials for phase-change memory
- Huai-Yu Cheng
- Simone Raoux
- et al.
- 2011
- Applied Physics Letters
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2 Sb2 Te5
- Huai-Yu Cheng
- Simone Raoux
- et al.
- 2010
- Journal of Applied Physics
Amorphization of crystalline phase change material by ion implantation
- Simone Raoux
- Guy M. Cohen
- et al.
- 2010
- MRS Online Proceedings Library
Understanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
Phase transitions in Ge-Te phase change materials studied by time-resolved x-ray diffraction
- Simone Raoux
- Becky Mun̈oz
- et al.
- 2009
- Applied Physics Letters
Crystallization times of Ge-Te phase change materials as a function of composition
- S. Raoux
- H.Y. Cheng
- et al.
- 2009
- Applied Physics Letters