New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
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48 results for Huai-Yu Cheng
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
- W. Chien
- Huai-Yu Cheng
- et al.
- 2016
- IEDM 2016
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2014
- IEDM 2014
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
- Huai-Yu Cheng
- W. Chien
- et al.
- 2015
- IEDM 2015
Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
- H.Y. Cheng
- Matthew Brightsky
- et al.
- 2013
- IEDM 2013
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials
- Jing Li
- Binquan Luan
- et al.
- 2011
- IEDM 2011
A low power phase change memory using thermally confined TaN/TiN bottom electrode
- J.Y. Wu
- Matthew Breitwisch
- et al.
- 2011
- IEDM 2011