A 0.168μm 2/0.11μm 2 highly scalable high performance embedded DRAM cell for 90/65-nm logic applications
- G. Wang
- P. Parries
- et al.
- 2005
- VLSI Technology 2005
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1-GHz fully pipelined 3.7-ns address access time 8 k × 1024 embedded synchronous DRAM macro
- Osamu Takahashi
- Sang H. Dhong
- et al.
- 2000
- IEEE Journal of Solid-State Circuits