Experimental study of the current flow in the quantum Hall regime
- Ch. Simon
- B.B. Goldberg
- et al.
- 1986
- Physical Review B
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112 results for S.L. Wright
Perpendicular transport across (Al,Ga)As and the Γ to X transition
- Paul M. Solomon
- Steven L. Wright
- et al.
- 1986
- Superlattices and Microstructures
Origin of]] residual" persistent photoconductivity in selectively doped GaAs/AlxGa1-xAs heterojunctions
- T.N. Theis
- S.L. Wright
- 1986
- Applied Physics Letters
PERPENDICULAR TRANSPORT MEASUREMENTS IN GaAs/(Al,Ga)As/GaAs HETEROSTRUCTURES.
- P. Solomon
- S.L. Wright
- 1986
- IEEE T-ED
Absence of Fermi level pinning at metal-InxGa1-xAs(100) interfaces
- L.J. Brillson
- M.L. Slade
- et al.
- 1986
- Applied Physics Letters
SELF-ALIGNED PROCESSES FOR THE GaAs GATE FET.
- H. Baratte
- D.C. La Tulipe
- et al.
- 1985
- IEDM 1985
Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctions
- J. Batey
- S.L. Wright
- et al.
- 1985
- Journal of Applied Physics
VA-6 Temperature-Dependent Properties of the Double HBJT
- S. Tiwari
- S.L. Wright
- et al.
- 1985
- IEEE T-ED
Room-temperature electron trapping in Al0.35Ga 0.65As/GaAs modulation-doped field-effect transistors
- Marshall I. Nathan
- P.M. Mooney
- et al.
- 1985
- Applied Physics Letters
IIA-7 A GaAs Gate Heterojunction FET-
- P. Solomon
- C.M. Knoedler
- et al.
- 1984
- IEEE T-ED