Temperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substrates
- K. Weiser
- P. Solomon
- et al.
- 1991
- Journal of Applied Physics
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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112 results for S.L. Wright
Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors
- S.L. Wright
- P. Solomon
- et al.
- 1991
- Applied Physics Letters
Temperature dependence of minority-carrier mobility and recombination time in p-type GaAs
- K. Beyzavi
- K. Lee
- et al.
- 1991
- Applied Physics Letters
Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy
- C.R. Lu
- J.R. Anderson
- et al.
- 1991
- Physical Review B
Material properties of p-type GaAs at large dopings
- Sandip Tiwari
- Steven L. Wright
- 1990
- Applied Physics Letters
Effects of the local environment on the properties of DX centers in Si-doped GaAs and dilute AlxGa1-xAs alloys
- E. Calleja
- F. Garcia
- et al.
- 1990
- Applied Physics Letters
Thermally stable ohmic contacts to n-type GaAs. VIII. Sputter-deposited InAs contacts
- H.-J. Kim
- Masanori Murakami
- et al.
- 1990
- Journal of Applied Physics
Accumulation capacitance for GaAs-SiO2 interfaces with Si interlayers
- J. Freeouf
- D.A. Buchanan
- et al.
- 1990
- Applied Physics Letters
Theoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K.R. Lee
- et al.
- 1990
- Journal of Applied Physics
Exponential thermal emission transients from DX centers in heavily Si-doped GaAs
- E. Calleja
- P.M. Mooney
- et al.
- 1990
- Applied Physics Letters