A novel approach to isolating the edge of the shallow trench isolation in SiGe HBTs for improved device performanceRenata Camillo-CastilloQ. Liuet al.2014ECSSMEQ 2014
3D integration techniques applied to SiGe power amplifiersRamana MalladiAlvin Josephet al.2008ECS Meeting 2008
A 0.35 μm SiGe BiCMOS technology for power amplifier applicationsAlvin JosephQizhi Liuet al.2007BCTM 2007