Electromigration: Void dynamics
- C. Witt
- V. Calero
- et al.
- 2016
- IEEE T-DMR
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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149 results for C. K. Hu
Electromigration in Cu(Al) and Cu(Mn) damascene lines
- C.-K. Hu
- J. Ohm
- et al.
- 2012
- Journal of Applied Physics
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES
Thermal stability of copper contact metallization using Ru-containing liner
- Soon-Cheon Seo
- C.-C. Yang
- et al.
- 2011
- Electrochemical and Solid-State Letters
Three-dimensional measurement of line edge roughness in copper wires using electron tomography
- Peter Ercius
- Lynne M. Gignac
- et al.
- 2009
- Microscopy and Microanalysis
Comparison of electromigration in Cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- JES
Line resistance and electromigration variations induced by hydrogen-based plasma modifications to the silicon carbonitride/copper interface
- E. Todd Ryan
- Jeremy Martin
- et al.
- 2007
- JES
Electromigration of Cu/low dielectric constant interconnects
- C.-K. Hu
- L. Gignac
- et al.
- 2006
- Microelectronics Reliability