Novel Advanced Low-k Dielectric for 2 nm and Beyond Cu and Post Cu Dual Damascene BEOL Interconnect Technologies
- S. Nguyen
- H. Huang
- et al.
- 2025
- VLSI Technology and Circuits 2025
Publications
33 results for C. J. Penny
First Demonstration of 16nm Pitch Subtractive Ru Interconnects for Advanced Technology Nodes
- C. Penny
- K. Motoyama
- et al.
- 2025
- IITC 2025
Subtractive Ru Interconnect Enabled by Novel Patterning Solution for EUV Double Patterning and TopVia with Embedded Airgap Integration for Post Cu Interconnect Scaling
- C. J. Penny
- Koichi Motoyama
- et al.
- 2022
- IEDM 2022
Interconnect scaling challenges, and opportunities to enable system-level performance beyond 30 nm pitch
- Griselda Bonilla
- Nicholas A. Lanzillo
- et al.
- 2020
- IEDM 2020
Exploring the Limits of Cobalt Liner Thickness in Advanced Copper Interconnects
- Nicholas A. Lanzillo
- Kisik Choi
- et al.
- 2019
- IEEE Electron Device Letters
Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
- Takeshi Nogami
- H. Huang
- et al.
- 2019
- VLSI Technology 2019
Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
- C. J. Penny
- S. Gates
- et al.
- 2017
- IITC 2017
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
ALD and PVD tantalum nitride barrier resistivity and their significance in via resistance trends
- O. Van Der Straten
- X. Zhang
- et al.
- 2014
- ECSSMEQ 2014
Performance of ultrathin alternative diffusion barrier metals for next - Generation BEOL technologies, and their effects on reliability
- Takeshi Nogami
- M. Chae
- et al.
- 2014
- IITC/AMC 2014