Demonstration of narrow switching distributions in STT-MRAM arrays for LLC applications at 1x nm node
- E. R.J. Edwards
- Guohan Hu
- et al.
- 2020
- IEDM 2020
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29 results for J. J. Nowak
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
- Guohan Hu
- D. Kim
- et al.
- 2019
- IEDM 2019
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
STT-MRAM with double magnetic tunnel junctions
- Guohan Hu
- J.H. Lee
- et al.
- 2015
- IEDM 2015
Switching distributions and write reliability of perpendicular spin torque MRAM
- D.C. Worledge
- G. Hu
- et al.
- 2010
- IEDM 2010
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- R. Beach
- T. Min
- et al.
- 2008
- IEDM 2008
Low-current spin transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-TSA 2017
Low-current Spin Transfer Torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-DAT 2017
Low-current spin transfer torque MRAM
- D.C. Worledge
- A. Annunziata
- et al.
- 2015
- INTERMAG 2015
Analytical MRAM test
- Raphael P. Robertazzi
- J. J. Nowak
- et al.
- 2014
- IEEE ITC 2014