Process and electrical characteristics of MO-ALD HfO2 films for high-K gate applications grown in a production-worthy 300 mm deposition system
- R.D. Clark
- C.S. Wajda
- et al.
- 2007
- ECS Meeting 2007
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19 results for R. Murphy
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
Systematic characterization of pseudomorphic (110) intrinsic SiGe epitaxial films for hybrid orientation technology with embedded SiGe source/drain
- Qiqing Ouyang
- Anita Madan
- et al.
- 2006
- MRS Spring Meeting 2006
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
An overview of 300mm SOI starting wafer quality and its yield detractors
- Pei Y. Tsai
- Marlene Almonte
- et al.
- 2005
- ISTFA 2005
A hydrogen pre-bake process for Si epitaxy on sige surface
- H. Chen
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
Qualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- H.J. Hovel
- M. Almonte
- et al.
- 2004
- Solid-State Electronics
Characterization of DI water/O3 oxidation of Si (100) and Si (111) surfaces by OCP measurements
- H. Okorn-Schmidt
- C. D'Emic
- et al.
- 2000
- Diffusion and Defect Data Pt.B: Solid State Phenomena
Film crystallographic texture and substrate surface roughness in layered aluminum metallization
- K.P. Rodbell
- V. Svilan
- et al.
- 1996
- MRS Spring Meeting 1996