Improvement of RC performance for advanced ULK/Cu interconnects with CVD hybrid dielectric/metal liner
- M. Tagami
- C.-C. Yang
- et al.
- 2011
- IITC/MAM 2011
Publications
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19 results for R. Murphy
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Low-temperature epitaxial growth of Si, SiGe, Ge, and SiC in a 300mm UHV/CVD reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Process and electrical characteristics of MO-ALD HfO2 films for high-K gate applications grown in a production-worthy 300 mm deposition system
- R.D. Clark
- C.S. Wajda
- et al.
- 2007
- ECS Meeting 2007
An overview of 300mm SOI starting wafer quality and its yield detractors
- Pei Y. Tsai
- Marlene Almonte
- et al.
- 2005
- ISTFA 2005
A hydrogen pre-bake process for Si epitaxy on sige surface
- H. Chen
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
Characterization of DI water/O3 oxidation of Si (100) and Si (111) surfaces by OCP measurements
- H. Okorn-Schmidt
- C. D'Emic
- et al.
- 2000
- Diffusion and Defect Data Pt.B: Solid State Phenomena
Electrodeposited Cu film morphology on thin PVD Cu seed layers
- James Kelly
- X. Lin
- et al.
- 2013
- JES
Qualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- H.J. Hovel
- M. Almonte
- et al.
- 2004
- Solid-State Electronics