Demonstration of narrow switching distributions in STT-MRAM arrays for LLC applications at 1x nm nodeE. R.J. EdwardsGuohan Huet al.2020IEDM 2020
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applicationsGuohan HuD. Kimet al.2019IEDM 2019
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJsGuohan HuM. G. Gottwaldet al.2017IEDM 2017