Highly selective silicon nitride etching to Si and SiO2 for a gate sidewall spacer using a CF3I/O2/H2 neutral beam
- Daiki Nakayama
- Akira Wada
- et al.
- 2013
- Journal of Physics D: Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.