Multiphonon-electron coupling enhanced defect generation and breakdown mechanism in MOL new spacer dielectrics for 7nm/5nm technology nodes and beyondErnest WuRichard G. Southwicket al.2020IEDM 2020
Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory ApplicationsErnest WuTakashi Andoet al.2019IEDM 2019
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL ApplicationsErnest WuBaozhen Liet al.2019IRPS 2019