Multiphonon-electron coupling enhanced defect generation and breakdown mechanism in MOL new spacer dielectrics for 7nm/5nm technology nodes and beyond
- Ernest Wu
- Richard G. Southwick
- et al.
- 2020
- IEDM 2020
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60 results for Baozhen Li
Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2017
- IEDM 2017
Multiple breakdown phenomena and modeling for non-uniform dielectric systems
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2014
- IEDM 2014
A time-dependent clustering model for non-uniform dielectric breakdown
- Ernest Y. Wu
- B. Li
- et al.
- 2013
- IEDM 2013
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Microstructure modulation in copper interconnects
- Chih-Chao Yang
- Baozhen Li
- et al.
- 2014
- IEEE Electron Device Letters
Effects of metal capping on thermal annealing of copper interconnects
- Chih-Chao Yang
- B. Li
- et al.
- 2012
- IEEE Electron Device Letters
In situ Co/SiC(N,H) capping layers for Cu/Low-k interconnects
- Chih-Chao Yang
- B. Li
- et al.
- 2012
- IEEE Electron Device Letters
Low-temperature reflow anneals of Cu on Ru
- C.-C. Yang
- Fenton R. McFeely
- et al.
- 2011
- IEEE Electron Device Letters
Evaluation of direct cu electroplating on Ru: Feature fill, parametric, and reliability
- C.-C. Yang
- B. Li
- et al.
- 2011
- IEEE Electron Device Letters