High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
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60 results for Baozhen Li
Co capping layers for Cu/low-k interconnects
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- ADMETA 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Enhanced via integration process for copper/ultralow-κ interconnects
- C.-C. Yang
- F. Chen
- et al.
- 2010
- IEEE Electron Device Letters
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- F. Chen
- M. Shinosky
- et al.
- 2009
- IRPS 2009
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Integration and reliability of CVD Ru Cap for Cu/Low-k development
- C.-C. Yang
- D. Edelstein
- et al.
- 2009
- IITC 2009
A multilevel copper/low-k/airgap BEOL technology
- S.V. Nitta
- S. Ponoth
- et al.
- 2007
- ADMETA 2007
Threshold electromigration failure time and its statistics for Cu interconnects
- Baozhen Li
- Cathryn Christiansen
- et al.
- 2006
- Journal of Applied Physics
Application of three-parameter lognormal distribution in EM data analysis
- Baozhen Li
- Emmanuel Yashchin
- et al.
- 2006
- Microelectronics Reliability