Minimum void size and 3-parameter lognormal distribution for em failures in Cu interconnectsBaozhen LiCathryn Christiansenet al.2006IRPS 2006
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applicationsMatthew AngyalJason Gillet al.2005AMC 2005
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrulesS. LaneM. Fukasawaet al.2005AMC 2005
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65 nm groundrulesM. FukasawaS. Laneet al.2005IITC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodesT. NogamiS. Laneet al.2005Optics East 2005
Measurements of effective thermal conductivity for advanced interconnect structures with various composite low-K dielectricsF. ChenJ. Gillet al.2004IRPS 2004
Measurements of effective thermal conductivity for advanced interconnect structures with various composite low-k dielectricsF. ChenJ. Gillet al.2004IRPS 2004
A 90nm dual damascene hybrid (organic / inorganic) low-k - Copper BEOL integration schemeT. DaltonA. Cowleyet al.2003ADMETA 2003