Integrated non-SO 2 underlayer and improved line-edge-roughness dielectric etch process using 193 nm bilayer resist
- Parijat Bhatnagar
- Siddhartha Panda
- et al.
- 2006
- Applied Physics Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.