Low-k spacers for advanced low power CMOS devices with reduced parasitic capacitances
- Elbert Huang
- Eric Joseph
- et al.
- 2008
- IEEE International SOI Conference 2008
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178 results for Wilfried Haensch
Will SOI have a life for the low-power market?
- Jin Cai
- Zhibin Ren
- et al.
- 2008
- IEEE International SOI Conference 2008
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
Measurement of silicon nanowires carrier mobility and its size dependence
- O. Gunawan
- L. Sekaric
- et al.
- 2008
- DRC 2008
FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
Why should we do 3D integration?
- Wilfried Haensch
- 2008
- DAC 2008
Investigation of thermal crosstalk between SOI FETs by the subthreshold sensing technique
- Manu Shamsa
- Paul M. Solomon
- et al.
- 2008
- IEEE Transactions on Electron Devices
High-performance undoped-body 8-nm-thin SOI field-effect transistors
- Amlan Majumdar
- Zhibin Ren
- et al.
- 2008
- IEEE Electron Device Letters