High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
Publications
68 results for Effendi Leobandung
Capacitor-based cross-point array for analog neural network with record symmetry and linearity
- Y. Li
- S. Kim
- et al.
- 2018
- VLSI Technology 2018
Electron mobility in thin In0.53Ga0.47As channel
- Eduard Cartier
- Amlan Majumdar
- et al.
- 2017
- ESSDERC 2017
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI-TSA 2017
Prospects of high-Ge-content strained SiGe for advanced FinFET generations
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2016
- PRiME/ECS Meeting 2016
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- Pouya Hashemi
- Takashi Ando
- et al.
- 2016
- VLSI Technology 2016
Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
- Pouya Hashemi
- Kam-Leung Lee
- et al.
- 2016
- VLSI Technology 2016
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016