Etch patterning for advanced devices
- Effendi Leobandung
- 2015
- SPIE Advanced Lithography 2015
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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62 results for Effendi Leobandung
Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- ECSSMEQ 2014
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs
- Karthik Balakrishnan
- Pouya Hashemi
- et al.
- 2014
- DRC 2014
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Circuits 2013
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Technology 2013
Channel doping impact on FinFETs for 22nm and beyond
- Chung-Hsun Lin
- R. Kambhampati
- et al.
- 2012
- VLSI Technology 2012
Voltage and temperature dependence of random telegraph noise in highly scaled HKMG ETSOI nFETs and its impact on logic delay uncertainty
- H. Miki
- M. Yamaoka
- et al.
- 2012
- VLSI Technology 2012
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
- Chung-Hsun Lin
- Wilfried Haensch
- et al.
- 2011
- VLSI Technology 2011