Publications

68 results for Effendi Leobandung

Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- - Tenko Yamashita
  - Veeraraghvan S. Basker
  - et al.
- 2011
- VLSI Technology 2011
Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
- - Chung-Hsun Lin
  - Wilfried Haensch
  - et al.
- 2011
- VLSI Technology 2011
Ultra-thin Body and BOX (UTBB) device for aggressive scaling of CMOS technology
- - Q. Liu
  - A. Yagishita
  - et al.
- 2011
- CSTIC 2011
Opportunities and challenges of FinFET as a device structure candidate for 14nm node CMOS technology
- - Tenko Yamashita
  - Veeraraghvan S. Basker
  - et al.
- 2011
- CSTIC 2011
A 0.063 μm² FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch
- - Veeraraghvan S. Basker
  - Theodorus E. Standaert
  - et al.
- 2010
- VLSI Technology 2010
Ultra-thin-body and BOX (UTBB) Fully Depleted (FD) device integration for 22nm node and beyond
- - Q. Liu
  - A. Yagishita
  - et al.
- 2010
- VLSI Technology 2010
On the systematic analysis of ring-delay performance using statistical behavior model
- - Q. Liang
  - B. Greene
  - et al.
- 2009
- ISDRS 2009
High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm ² SRAM and ultra low-k back end with eleven levels of copper
- - B. Greene
  - Q. Liang
  - et al.
- 2009
- VLSI Technology 2009
SMT and enhanced SPT with Recessed SD to improve CMOS Device Performance
- - S. Fang
  - S.S. Tan
  - et al.
- 2008
- ICSICT 2008
Recent progress and challenges in enabling embedded Si:C technology
- - B. Yang
  - Z. Ren
  - et al.
- 2008
- ECS Meeting 2008