Positive bilayer resists for 248- and 193-nm lithography
- Ratnam Sooriyakumaran
- Gregory M. Wallraff
- et al.
- 1998
- Microlithography 1998
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76 results for R. Sooriyakumaran
Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.
Platform-dependent properties of 193nm single layer resists
- Robert D. Allen
- Thomas I. Wallow
- et al.
- 1998
- J. Photopolym. Sci. Tech.
The influence of photoacid structure on the design and performance of 193-nm resists
- Robert D. Allen
- Juliann Opitz
- et al.
- 1997
- J. Photopolym. Sci. Tech.
Molecular design for stabilization of chemical amplification resist toward airborne contamination
- Hiroshi Ito
- William P. England
- et al.
- 1993
- Microlithography 1993
Approach toward environmental stabilization of chemical amplification resists
- Hiroshi Ito
- William P. England
- et al.
- 1993
- J. Photopolym. Sci. Tech.
Acid-catalyzed dehydration for the design of chemical amplification resists
- Hiroshi Ito
- R. Sooriyakumaran
- et al.
- 1991
- ACS Spring 1991
Fluorescence of poly(di-n-alkylsilane)s in room-temperature solution
- Ya-Ping Sun
- Robert D. Miller
- et al.
- 1991
- Journal of Inorganic and Organometallic Polymers
Nonlinear optical properties of soluble substituted polysilanes and polygermanes
- R.D. Miller
- J.-C. Baumert
- et al.
- 1990
- ACS Division of Polymer Chemistry Washington DC Meeting 1990
Structural studies of reversible piezochromism in poly(alkylsilanes)
- J.F. Rabolt
- K. Song
- et al.
- 1990
- ACS Division of Polymer Chemistry Washington DC Meeting 1990