ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
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20 results for Scott Luning
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Impact of back bias on ultra-thin body and BOX (UTBB) devices
- Q. Liu
- Frederic Monsieur
- et al.
- 2011
- VLSI Technology 2011
Ultra-thin Body and BOX (UTBB) device for aggressive scaling of CMOS technology
- Q. Liu
- A. Yagishita
- et al.
- 2011
- CSTIC 2011
Advanced metallization developments for 32-nm node CMOS technology contact architecture
- Doug H. Lee
- Valli Arunachalam
- et al.
- 2009
- ADMETA 2009
High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009
Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturing
- M. Cai
- B. Greene
- et al.
- 2008
- IEEE International SOI Conference 2008
Recent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008
CMOS fabricated by hybrid-orientation technology (HOT)
- Bin Yang
- M. Yang
- et al.
- 2007
- IEDST 2007
Dual stress liner enhancement in hybrid orientation technology
- C. Sheraw
- M. Yang
- et al.
- 2005
- VLSI Technology 2005