Analytical solution to a double-gate MOSFET with undoped body
- Yuan Taur
- 2000
- IEEE Electron Device Letters
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83 results for Yuan Taur
Generalized scale length for two-dimensional effects in MOSFET's
- David J. Frank
- Yuan Taur
- et al.
- 1998
- IEEE Electron Device Letters
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- IEEE Electron Device Letters
On “Effective Channel Length” in 0.1-µm MOSFET's
- Yuan Taur
- Yuh-Jier Mii
- et al.
- 1995
- IEEE Electron Device Letters
Experimental High Performance Sub-0.1 μm Channel nMOSFET's
- Y. Mii
- S. Rishton
- et al.
- 1994
- IEEE Electron Device Letters
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
- Yuan Taur
- S. Cohen
- et al.
- 1993
- IEEE Electron Device Letters
BiCMOS Technology with 60-GHz n-p-n Bipolar and 0.25-μm CMOS
- James Warnock
- Ghavam G. Shahidi
- et al.
- 1992
- IEEE Electron Device Letters
A New “Shift and Ratio” Method for MOSFET Channel-Length Extraction
- Yuan Taur
- D.S. Zicherman
- et al.
- 1992
- IEEE Electron Device Letters
Sidewall Oxidation of Polycrystalline-Silicon Gate
- Joseph Piccirillo
- Arup Bhattacharyya
- et al.
- 1989
- IEEE Electron Device Letters