RF perspective of sub-tenth-micron CMOS

Abstract

Sub-tenth-micron complementary metal oxide semiconductor (CMOS) integrated circuits has cut-off frequency reaching 150 GHz and gate delay around 15 ps at 1.5 VVdd. The device speed suggests that CMOS has the potential for radio frequency (RF) and microwave applications. Since these short-channel metal oxide semiconductor field effect transistors (MOSFET) are designed mainly for digital applications, the fine-tuning in device design needed for analog applications is presented. The device and circuit results using sub-tenth-micron CMOS and its device design directions are discussed.