FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
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18 results for Bin Yang
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- Zhibin Ren
- G. Pei
- et al.
- 2008
- VLSI Technology 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
CMOS fabricated by hybrid-orientation technology (HOT)
- Bin Yang
- M. Yang
- et al.
- 2007
- IEDST 2007
Accurate method of measuring specific contact resistivity of interface between silicide and silicon and its application
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2012
- Japanese Journal of Applied Physics
Advanced strain engineering for state-of-the-art nanoscale CMOS technology
- Bin Yang
- Ming Cai
- 2011
- Science China Information Sciences
Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-x Ptx silicide films
- Zhen Zhang
- Bin Yang
- et al.
- 2010
- Applied Physics Letters
Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-x Ptx on Si substrate
- Zhen Zhang
- Shi Li Zhang
- et al.
- 2010
- Applied Physics Letters