Material and integration issues for rare-Earth Silicides as gate and diffusion contacts in advanced CMOS
- C. D'Emic
- K. Ohuchi
- et al.
- 2008
- ECS Meeting 2008
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18 results for Bin Yang
Recent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- Zhibin Ren
- G. Pei
- et al.
- 2008
- VLSI Technology 2008
FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
CMOS fabricated by hybrid-orientation technology (HOT)
- Bin Yang
- M. Yang
- et al.
- 2007
- IEDST 2007