80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
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45 results for M. Gribelyuk
Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
- S. Guha
- E. Cartier
- et al.
- 2000
- Applied Physics Letters
Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate
- Ryan C. Smith
- Noel Hoilien
- et al.
- 2000
- JES
Structure and stability of ultrathin zirconium oxide layers on Si(001)
- M. Copel
- M. Gribelyuk
- et al.
- 2000
- Applied Physics Letters
High-resolution depth profiling in ultrathin Al2O3 films on Si
- E. Gusev
- M. Copel
- et al.
- 2000
- Applied Physics Letters