Dual-gate silicon nanowire transistors with nickel silicide contacts
- J. Appenzeller
- J. Knoch
- et al.
- 2006
- IEDM 2006
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108 results for Mark C. Reuter
Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces
- A. Portavoce
- M. Kammler
- et al.
- 2006
- Nanotechnology
Realization of a linear germanium nanowire p-n junction
- Emanuel Tutuc
- Joerg Appenzeller
- et al.
- 2006
- Nano Letters
Si and Ge nanowire growth mechanisms observed using in situ microscopy
- S. Kodambaka
- J.B. Hannon
- et al.
- 2006
- M&M 2006
Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires
- S. Kodambaka
- J. Tersoff
- et al.
- 2006
- Physical Review Letters
Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires
- Hemanth Jagannathan
- Yoshio Nishi
- et al.
- 2006
- Applied Physics Letters
Sawtooth faceting in silicon nanowires
- F.M. Ross
- J. Tersoff
- et al.
- 2005
- Physical Review Letters
Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)
- A. Portavoce
- M. Kammler
- et al.
- 2004
- Physical Review B - CMMP
In-situ observations of self-assembled island nucleation on patterned substrates
- F.M. Ross
- M. Kammler
- et al.
- 2004
- Philosophical Magazine