Plasma chemical aspects of magnetron ion etching with CF4/O 2
- A.A. Bright
- S. Kaushik
- et al.
- 1987
- Journal of Applied Physics
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118 results for Gottlieb S. Oehrlein
Silicon etching mechanisms in a CF4/H2 glow discharge
- Gottlieb S. Oehrlein
- Holly L. Williams
- 1987
- Journal of Applied Physics
Thermal donors and carbonoxygen defects in silicon
- J.L. Lindström
- H. Weman
- et al.
- 1987
- physica status solidi (a)
Rutherford backscattering studies of plasma-etched silicon
- Gottlieb S. Oehrlein
- 1986
- Journal of Applied Physics
Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon
- G.S. Oehrlein
- 1986
- Journal of Applied Physics
Plasma-deposited fluorocarbon films on silicon studied by ellipsometry
- Gottlieb S. Oehrlein
- Ivar Reimanis
- et al.
- 1986
- Thin Solid Films
Summary Abstract: Reactive ion-etching-related Si surface residues and subsurface disorder
- G.S. Oehrlein
- J.G. Clabes
- et al.
- 1986
- JVSTA
Schottky diode analysis for evaluation of RIE effects on silicon surfaces
- P. Spirito
- C.M. Ransom
- et al.
- 1986
- Solid-State Electronics
A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon
- X.C. Mu
- S.J. Fonash
- et al.
- 1986
- Journal of Applied Physics
Silicon near-surface disorder and etch residues caused by CCIF 3/H2 reactive ion etching
- G.S. Oehrlein
- C.M. Ransom
- et al.
- 1985
- Applied Physics Letters