Transient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching
- Mark A. Jaso
- Gottlieb S. Oehrlein
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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117 results for Gottlieb S. Oehrlein
Microstructural studies of reactive ion etched silicon
- S.-J. Jeng
- G.S. Oehrlein
- 1987
- Applied Physics Letters
Structure of the boron-hydrogen complex in crystalline silicon
- A.D. Marwick
- G.S. Oehrlein
- et al.
- 1987
- Physical Review B
Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms
- Gottiieb S. Oehrlein
- Young H. Lee
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Thermal donors and carbonoxygen defects in silicon
- J.L. Lindström
- H. Weman
- et al.
- 1987
- physica status solidi (a)
Silicon etching mechanisms in a CF4/H2 glow discharge
- Gottlieb S. Oehrlein
- Holly L. Williams
- 1987
- Journal of Applied Physics
Plasma chemical aspects of magnetron ion etching with CF4/O 2
- A.A. Bright
- S. Kaushik
- et al.
- 1987
- Journal of Applied Physics
Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon
- G.S. Oehrlein
- 1986
- Journal of Applied Physics
Rutherford backscattering studies of plasma-etched silicon
- Gottlieb S. Oehrlein
- 1986
- Journal of Applied Physics
Plasma-deposited fluorocarbon films on silicon studied by ellipsometry
- Gottlieb S. Oehrlein
- Ivar Reimanis
- et al.
- 1986
- Thin Solid Films