Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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7 results for Guangrui Xia

High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
- - Winston Chern
  - Pouya Hashemi
  - et al.
- 2012
- IEDM 2012
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- - B. Yang
  - R. Takalkar
  - et al.
- 2008
- IEDM 2008
Recent progress and challenges in enabling embedded Si:C technology
- - B. Yang
  - Z. Ren
  - et al.
- 2008
- ECS Meeting 2008
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- - Zhibin Ren
  - G. Pei
  - et al.
- 2008
- VLSI Technology 2008
Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors
- - Guangrui Xia
  - Judy L. Hoyt
  - et al.
- 2007
- Journal of Applied Physics
Interdiffusion in strained Si/strained SiGe epitaxial heterostructures
- - Guangrui Xia
  - Michael Canonico
  - et al.
- 2006
- Semiconductor Science and Technology
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- - Guangrui Xia
  - Hasan M. Nayfeh
  - et al.
- 2004
- IEEE Transactions on Electron Devices