High performance bulk planar 20nm CMOS technology for low power mobile applicationsHuiling ShangSameer Jainet al.2012VLSI Technology 2012
Performance elements for 28nm gate length bulk devices with gate first high-k metal gateJun YuanC. Gruensfelderet al.2010ICSICT 2010
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressorB. YangR. Takalkaret al.2008IEDM 2008
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineeringB. YangA. Waiteet al.2007IEDM 2007
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cellE. LeobandungH. Nayakamaet al.2005VLSI Technology 2005