Patterning strategies for gate level tip-tip distance reduction in SRAM cell for 45nm and beyondHaoren ZhuangHelen Wanget al.2007ISTC 2007
A 45nm low cost low power platform by using integrated dual-stress-liner technologyJ. YuanS.S. Tanet al.2006VLSI Technology 2006
Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOSHaizhou YinC.Y. Sunget al.2006IEDM 2006
Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devicesJ.-P. HanH. Utomoet al.2006IEDM 2006
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substratesChun-Yung SungHaizhou Yinet al.2005IEDM 2005
Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substratesQiqing OuyangMin Yanget al.2005VLSI Technology 2005
Design of high performance PFETs with strained Si channel and laser annealZ. LuoY.F. Chonget al.2005IEDM 2005
Interaction of middle-of-line (MOL) temperature and mechanical stress on 90nm hi-speed device performance and reliabilityK.Y. LimV. Chanet al.2005ESSDERC 2005
On the integration of CMOS with hybrid crystal orientationsM. YangV. Chanet al.2004VLSI Technology 2004