A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applicationsS. KrishnanU. Kwonet al.2011IEDM 2011
Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technologyJin-Ping HanTakashi Shimizuet al.2011Japanese Journal of Applied Physics
Developing contact oxide CUP process for 32 nm technology nodesJohn H. ZhangRajasekhar Venigallaet al.2008VMIC 2008