A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applicationsS. KrishnanU. Kwonet al.2011IEDM 2011
Developing contact oxide CUP process for 32 nm technology nodesJohn H. ZhangRajasekhar Venigallaet al.2008VMIC 2008
Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technologyJin-Ping HanTakashi Shimizuet al.2011Japanese Journal of Applied Physics