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Performance elements for 28nm gate length bulk devices with gate first high-k metal gateJun YuanC. Gruensfelderet al.2010ICSICT 2010
Competitive and cost effective high-k based 28nm CMOS technology for low power applicationsF. ArnaudA. Theanet al.2009IEDM 2009
A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrateJ. YuanV. Chanet al.2008ICSICT 2008
Channel Strain Characterization in Embedded SiGe by Nano-beam DiffractionJ. LiA. Lambertiet al.2008ECS Meeting 2008
A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first processX. ChenS. Samavedamet al.2008VLSI Technology 2008
High performance transistors featured in an aggressively scaled 45nm bulk CMOS technologyZ. LuoN. Rovedoet al.2007VLSI Technology 2007
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyondX. ChenS. Fanget al.2006VLSI Technology 2006
A 45nm low cost low power platform by using integrated dual-stress-liner technologyJ. YuanS.S. Tanet al.2006VLSI Technology 2006