SiGe technology: Heteroepitaxy and high-speed microelectronics
- P.M. Mooney
- J.O. Chu
- 2000
- Annual Review of Materials Science
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148 results for Jack O. Chu
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
- P.M. Mooney
- J.O. Chu
- et al.
- 2000
- Journal of Electronic Materials
High transconductance 0.1 μm Ge/Si0.4Ge0.6 Schottky-gated p-MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- DRC 1999
High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs
- R. Hammond
- S.J. Koester
- et al.
- 1999
- Electronics Letters
Quantum indistinguishability effects of confined polyexcitons
- Kai Shum
- P.M. Mooney
- et al.
- 1999
- Physical Review B - CMMP
High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
- S.J. Koester
- J.O. Chu
- et al.
- 1999
- Electronics Letters
Interface morphology in strained layer epitaxy of Si/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy
- Z. Kovats
- T. Salditt
- et al.
- 1999
- Journal of Physics D: Applied Physics
Determination of spin- and valley-split energy levels in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1999
- Semiconductor Science and Technology
X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates
- P.M. Mooney
- J.A. Ott
- et al.
- 1998
- Applied Physics Letters
Negative differential conductance in strained Si point contacts and wires
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters