Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004
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148 results for Jack O. Chu
SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOS device
- K.-L. Lee
- F. Cardone
- et al.
- 2004
- ECS Meeting 2004
Fabrication, device design and mobility enhancement of germanium channel MOSFETs
- Huiling Shang
- E. Gousev
- et al.
- 2004
- ICSICT 2004
High speed, lateral PIN photodiodes in silicon technologies
- Jeremy D. Schaub
- Steven J. Koester
- et al.
- 2004
- SPIE IOPTO 2004
Channel design and mobility enhancement in strained germanium buried channel MOSFETs
- H. Shang
- J.O. Chu
- et al.
- 2004
- VLSI Technology 2004
Influence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates
- J. Cai
- P.M. Mooney
- et al.
- 2004
- MRS Proceedings 2004
Strained Si-on-insulator fabricated from elastically-relaxed Si/SiGe structures
- P.M. Mooney
- G.M. Cohen
- et al.
- 2004
- MRS Proceedings 2004
High-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
SGOI thinning and uniformity improvement using a fluoride GCIB process
- J.O. Chu
- L.P. Allen
- et al.
- 2003
- IEEE International SOI Conference 2003