L.J. Huang, J.O. Chu, et al.
VLSI Technology 2001
The elastic strain relaxation in free standing SiGe/Si structures was investigated. The free-standing Si layers were fabricated supported at a single point by an SiO 2 pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model. Strained Si layers with biaxial tensile strain equal to 0.007 and 0.012.
L.J. Huang, J.O. Chu, et al.
VLSI Technology 2001
G. Dehlinger, J. Schaub, et al.
LEOS 2005
M.S. Goorsky, T.F. Kuech, et al.
Applied Physics Letters
K. Rim, R. Anderson, et al.
Solid-State Electronics