Conference paper
High-speed germanium-on-insulator photodetectors
G. Dehlinger, J. Schaub, et al.
LEOS 2005
The elastic strain relaxation in free standing SiGe/Si structures was investigated. The free-standing Si layers were fabricated supported at a single point by an SiO 2 pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model. Strained Si layers with biaxial tensile strain equal to 0.007 and 0.012.
G. Dehlinger, J. Schaub, et al.
LEOS 2005
K. Rim, S.J. Koester, et al.
VLSI Technology 2001
R.B. Dunford, R. Newbury, et al.
Solid State Communications
R.M. Feenstra, M.A. Lutz, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures