U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Paper
Elastic strain relaxation in free-standing SiGe/Si structures
Abstract
The elastic strain relaxation in free standing SiGe/Si structures was investigated. The free-standing Si layers were fabricated supported at a single point by an SiO 2 pedestal and subsequently grew an epitaxial SiGe layer. The measured strain relaxation of the SiGe layer agrees well with that calculated using a force-balance model. Strained Si layers with biaxial tensile strain equal to 0.007 and 0.012.
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