Scaling between channel mobility and interface state density in SiC MOSFETs
- John Rozen
- Ayayi C. Ahyi
- et al.
- 2011
- IEEE T-ED
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3 results for John R. Williams
Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces
- A.F. Basile
- John Rozen
- et al.
- 2011
- Journal of Applied Physics
The radiation tolerance of strained Si/SiGe n-MODFETs
- Anuj Madan
- Bongim Jun
- et al.
- 2007
- IEEE TNS