Paul Solomon, Douglas M. Bishop, et al.
IRPS 2021
The direct impact of the SiO2/4H-SiC interface state density (Dit) on the channel mobility of lateral field-effect transistors is studied by tailoring the trap distribution via nitridation of the thermal gate oxide. We observe that mobility scales like the inverse of the charged state density, which is consistent with Coulomb-scattering-limited transport at the interface. We also conclude that the Dit further impacts even the best devices by screening the gate potential, yielding small subthreshold swings and poor turn-ON characteristics. © 2011 IEEE.
Paul Solomon, Douglas M. Bishop, et al.
IRPS 2021
Eduard Cartier, Martin M. Frank, et al.
IRPS 2018
John Rozen, Masahiro Nagano, et al.
Journal of Materials Research
Eduard Cartier, Amlan Majumdar, et al.
ESSDERC 2017