Scaling between channel mobility and interface state density in SiC MOSFETs
- John Rozen
- Ayayi C. Ahyi
- et al.
- 2011
- IEEE T-ED
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4 results for Leonard C. Feldman
Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces
- A.F. Basile
- John Rozen
- et al.
- 2011
- Journal of Applied Physics
Kinetic study of Si recrystallization in the reaction between Au and polycrystalline-Si films
- L.H. Allen
- J.W. Mayer
- et al.
- 1990
- Physical Review B
Search for cluster effects in x-ray production by fast hydrogen molecules
- A. Lurio
- H.H. Andersen
- et al.
- 1978
- Physical Review A